Calculates the 'skewness' of the 1D doping profile from ion implant. The script command takes the semiconductor material name, dopant type, and ion energy as input arguments.
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Syntax |
Description |
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out = implantskewness("dopant", "semiconductor", E) |
Provides the 'skewness' of the 1D doping profile from ion implant. The "dopant" argument is a string providing the dopant type. The options are (i) "boron", (ii) "phosphorous", (iii) "antimony", and (iv) "arsenic". The "semiconductor" argument is a string providing the semiconductor type. The only available option is "silicon". The last argument (E) is the ion energy for the implant in units of eV. |
Example
The following script calculates the range, straggle, skewness, kurtosis, and lateral scatter for an ion implant in 'silicon' with 'boron' for an ion implant energy of 1 keV. The script then calculates the peak concentration for the 1D doping profile for an ion dose of 2e13 /cm 2 and sets up an implant doping object in the CHARGE solver to model the corresponding doping profile.
E = 1000; # eV
dose = 2e13 * 1e4; # /m^2
mu = implantrange("boron","silicon",E); # range in m
si = implantstraggle("boron","silicon",E); # straggle in m
gal = implantskewness("boron","silicon",E); # skewness
be2 = implantkurtosis("boron","silicon",E); # kurtosis
si_lat = implantlateralscatter("boron","silicon",E); # lateral scatter in m
# calculate peak doping concentration
x = linspace(0,mu+10*si,1001);
y = pearson4pdf(x,mu,si,gal,be2);
ion_absorbed = integrate(y,[1],x);
peak = max(y)*dose/ion_absorbed; # peak doping density in /m^3
# set up implant doping object (assume doping object is already present in the objects tree)
select("CHARGE::implant");
set("dopant type","p");
set("peak concentration",peak);
set("distribution function","pearson4");
set("range",mu);
set("straggle",si);
set("skewness",gal);
set("kurtosis",be2);
set("lateral scatter",si_lat);
See Also
implantrange , implantstraggle , implantkurtosis , implantlateralscatter , fitnormpdf , fitpearson4pdf , pearson4pdf