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Diffusion doping region - Simulation object

CHARGE

icon_doping_diffusion.jpg

The diffusion region object allows the user to define a region with a dopant concentration profile. The region geometry as well as parameters can be entered. 

NOTE:

  • Doping objects are only valid for semiconductor materials.  Any conductor and insulator that overlaps with the doping objects will not get any doping value assigned to them.
  • Doping objects are additive. This means that in the areas where two or more doping objects overlap, the net doping is calculated as the sum of the doping values of all those doping objects. n and p type doping values are considered to have opposite signs so they subtract from each other.

Geometry tab

  • X, Y, Z: The center position of the simulation region
  • X MIN, X MAX: X min, X max position
  • Y MIN, Y MAX: Y min, Y max position
  • Z MIN, Z MAX: Z min, Z max position
  • X SPAN, Y SPAN, Z SPAN: X, Y, Z span of the simulation region
  • APPLICABLE DOMAINS: This can be used to limit the volume over which the imported object is applicable. The object will be applied only to the volume that has overlap between the original object volume and the selected domain.  
  • DOMAIN : Select the target domain. The reference geometry is the surfaces of the selected domain.
  • SOLID : Select the target solid. The reference geometry is the surfaces that enclose the selected volume if the solid is a 3D shape, or the surface if the solid is a 2D plane.
  • ALL DOMAINS: The object will be applied to all the available domains.
  • USE RELATIVE COORDINATES: If this is enabled then the doping region will use the center or the CHARGE solver as its origin (reference).  If disabled then it will use the absolute center (0,0,0) as its origin.

Diffusion parameters tab

  • DOPANT TYPE: The dopant type can be n-type (donors) or p-type (acceptors).
  • SOURCE FACE: The side of the region where the surface concentration is defined (i.e. where the diffusion source originates). For example, "upper y" refers to the face defined by "y max".
  • JUNCTION WIDTH: The width of the doping profile from surface (peak) concentration to reference concentration at the edge of the diffusion region.
  • DIFFUSION FUNCTION: The doping concentration profile, can be Gaussian ("gaussian 3d") or the complementary error function ("erfc 3d"). "gaussian" and "erfc" are legacy options for 2020A-R4 and earlier.
  • CONCENTRATION: The concentration of the dopant at the surface (the peak concentration) can be entered.
  • REFERENCE CONCENTRATION: The doping concentration on the exterior of the box (excluding the originating face).

Associated files

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