Calculates the 'range' of the 1D doping profile from ion implant. in silicon The script command takes the semiconductor material name, dopant type, and ion energy as input arguments.
This script command follows the method used in [1].
| Syntax | Description |
|---|---|
| out = implantrange("dopant", "semiconductor", E) |
Provides the 'range' of the 1D doping profile from ion implant in units of m.
|
Example
The following script calculates the range, straggle, skewness, kurtosis, and lateral scatter for an ion implant in 'silicon' with 'boron' for an ion implant energy of 1 keV. The script then calculates the peak concentration for the 1D doping profile for an ion dose of 2e13 /cm 2 and sets up an implant doping object in the CHARGE solver to model the corresponding doping profile.
E = 1000; # eV
dose = 2e13 * 1e4; # /m^2
mu = implantrange("boron","silicon",E); # range in m
si = implantstraggle("boron","silicon",E); # straggle in m
gal = implantskewness("boron","silicon",E); # skewness
be2 = implantkurtosis("boron","silicon",E); # kurtosis
si_lat = implantlateralscatter("boron","silicon",E); # lateral scatter in m
# calculate peak doping concentration
x = linspace(0,mu+10*si,1001);
y = pearson4pdf(x,mu,si,gal,be2);
ion_absorbed = integrate(y,[1],x);
peak = max(y)*dose/ion_absorbed; # peak doping density in /m^3
# set up implant doping object (assume doping object is already present in the objects tree)
select("CHARGE::implant");
set("dopant type","p");
set("peak concentration",peak);
set("distribution function","pearson4");
set("range",mu);
set("straggle",si);
set("skewness",gal);
set("kurtosis",be2);
set("lateral scatter",si_lat);References
[1] Selberherr, S. Analysis and Simulation of Semiconductor Devices, Springer Verlag, Vienna (1984)
See Also
implantstraggle , implantkurtosis , implantskewness , implantlateralscatter , fitnormpdf , fitpearson4pdf , pearson4pdf