An electro-optic phase shifter model based on free-carrier plasma dispersion effects, operating in injection mode. This device is assumed to be composed of an active region in the middle, connected to the input/output ports by passive transitions and waveguides. For a diagram of the expected layout, see the Internal Model Diagram in photonic model page.
For an example of a similar device, see the PIN Mach-Zehnder modulator example in the Application Gallery.
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Electrical Phase Shifter (Forward Bias) - Lumfoundry Template (Legacy)
Template: ps_pin_te_c (injection type)
Photonic Model: phase_shifter_electrical
Quality Assurance Test: phase_shifter_electrical QA
Supported Parameters: length of the active region
Virtuoso/Verilog-A Support: Yes (not for travelling wave models).
Application Gallery Example:PIN Mach-Zehnder modulator
Required Data
This template allows for the creation of compact models operating under forward bias (injection type).
Parameter Script File
[[snippet||7228384629395]]
lock_Vpi_Lpi |
Boolean |
Enable/disable tuning of the Vpi_Lpi (V-m) of the phase shifter. Note: locking Vpi-Lpi is not available for Verilog-A model. |
QA Variables
[[snippet||7227146485523]]
Vpi_Lpi_rel_tolerance | Number |
Relative tolerance for QA tests which verify the model properties. If the simulated values differ from the values provided within the data file by more than this tolerance, the QA tests will fail. |
* Note: BW_test_bias is typically set at half Vpi of the phase shifter with default length.
Data File
[[snippet||7229114568851]]
electrical_bandwidth_data |
Matrix
|
N x 2 matrix containing the 3-dB cutoff frequency (Hz) of the electrical modulator as a function of bias current (A), where N is the number of bias points, and the columns contain:
Notes:
|
phase_shifter_data |
M x 1 cell array containing structs which describe the variation of the effective index within the active region, as a function of bias current (A). Each element of the cell array is a struct containing the following fields:
Notes:
|
|
IV_data |
struct |
The current data, as a function of voltage and temperature, in the form of a struct with the following fields:
Note: For current data that is insensitive to voltage or temperature, only a single voltage/temperature data point should be provided. Alternatively, for temperature independent IV data, the data can be provided as a Cx2 matrix with the first column containing the voltage data and second containing the current data. C denotes the number of data points. |
Model Tuning & QA Data
This data is required for CML Compiler to run quality-assurance tests on the final model. It is also optionally used by CML Compiler to fine-tune the internal model to provide the expected behavior.
Variable | Type | Description |
---|---|---|
IL |
Struct
|
The total insertion loss (dB) of the phase shifter at zero bias provided as a struct. The struct has the following fields:
Notes:
|
Vpi_Lpi |
Large signal Vpi.Lpi (V-m) of the electrical phase shifter (as explained in the Vpi Data Visualization in photonic model page section) for voltages between Vpi_Lpi_voltage1 and Vpi_Lpi_voltage2 provided as a struct. The struct has the following fields:
Notes:
|
|
Vpi_Lpi_voltage1 |
Matrix
|
M x 1 matrix containing the lower limit of the bias voltage for which the Vpi_Lpi values are valid, where M is the number of modes. |
Vpi_Lpi_voltage2 |
M x 1 matrix containing the upper limit of the bias voltage for which the Vpi_Lpi values are valid, where M is the number of modes. |
Electrical Phase Shifter Data
In order to model the electrical phase shifter, a lumped model may be used. The RC data within this section is used to construct an electrical equivalent circuit which captures the bandwidth and loading effects of the electrical phase shifters when the compact model is simulated using Cadence Spectre. When the compact model is used standalone in INTERCONNECT, the electrical bandwidth is captured by an INTERCONNECT electrical low pass filter, which has a 3dB cut-off frequency calculated based on the RC data described in this section. The RC parameter data is optional, and if not provided, it will be automatically back-calculated based on device’s electrical_bandwidth_data by CML Compiler.
For more information on the equivalent circuit, see Electrical Equivalent Circuit in photonic model page.
Electrical parameters
Variable | Type | Description |
---|---|---|
Cj |
Matrix |
N x 2 matrix containing the junction capacitance (F/m) of the electrical phase shifter, where N is the number of bias points, and the columns contain:
Notes:
|
Rs | Matrix |
Series resistance (Ohm) of the phase shifter. A Tx1 matrix containing Rs values at the corresponding temperature points used in IV_data. |
Rp |
Number
|
Parasitic resistance (Ohm) of the metal pad. |
Cp |
Parasitic capacitance (F) between metal pads. |
|
Is |
Matrix |
Reverse saturation current of the diode (A). A Tx1 matrix containing Is values at the corresponding temperature points used in IV_data. |
Ndiode |
Number |
Diode ideality factor. |