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EAM model_data

Field Type Description

photonic_model 

 string

The name of the photonic model used for this template. 

Please visit here for a list of all available photonic models.  

mode_data

 cell

1 x 1 cell array. Each element of the cell is a struct with fields:

  • name: string with the name of the mode ("TE" or "TM")
  • ID: integer to identify the mode, which should be 1 for "TE" and 2 for "TM". These should be consistent across the entire CML.

Note: This model only supports a single mode.

wavelength

 number Operating wavelength (m) of the EAM, typically the center of the band.

bandwidth_data

 number 3 dB cutoff frequency (Hz) of the EAM.

loss_taper

 number

Loss (dB) of each of the input and output tapers at wavelength equal to "wavelength".

Note: Data must be provided as a positive value.

taper_filename

 string A string containing the filename of the text file containing the S-parameter data for the input and output tapers.
transmission_voltage_data
 struct

Transmission spectrum (dB) of the EAM at different bias (V) voltages at room temperature (300 K). The required fields are:

  • frequency: Frequency (Hz) points as a Fx1 matrix.
  • voltage: Bias voltage (V) points as Vx1 matrix.
  • transmission: Transmission (dB) at different frequencies and voltage points as a FxV matrix.

Note: 

  • Data must be provided for at least two frequency and two bias points.
  • Bias voltage is defined as V_anode - V_cathode.
Idark_data
 struct

Dark current (A) of the EAM at cathode as a function of applied bias voltage (V) at different temperature (K). The required fields are:

  • voltage: Bias voltage (V) points as Vx1 matrix.
  • temperature: Temperature (K) points as a Tx1 matrix.
  • Idark: Dark current (A) at different voltage points and temperature points as a VxT matrix.

Note:

  • Data must be provided for at least two bias voltages.
  • Bias voltage is defined as V_anode - V_cathode.
  • Current at cathode should be positive in reverse bias and negative in forward bias.
resp_voltage_data
 struct

Responsivity (A/W) of the EAM at different bias (V) voltages at room temp (300 K). The required fields are:

  • frequency: Frequency (Hz) points as a Fx1 matrix.
  • voltage: Bias voltage (V) points as Vx1 matrix.
  • responsivity: Responsivity (A/W) at different frequencies and voltage points as a FxV matrix.

Note:

  • Data must be provided for at least two frequency and two bias points.
  • Bias voltage is defined as V_anode - V_cathode.
  • Responsivity must be a positive number.
transmission_temperature_data (optional)
 struct 

Transmission spectrum (dB) of the EAM at different temperature (K) at zero bias. The required fields are:

  • frequency: Frequency (Hz) points as a Fx1 matrix.
  • temperature: Temperature (K) points as Tx1 matrix.
  • transmission: Transmission (dB) at different frequencies and temperature points as a FxT matrix.

Note:

  • This optional data is required to model the temperature dependency of the transmission.
  • Data must be provided for at least two frequency and two temperature points.
resp_temperature_data (optional)
 struct

Responsivity (A/W) of the EAM at different temperature (K) at zero bias. The required fields are:

  • frequency: Frequency (Hz) points as a Fx1 matrix.
  • temperature: Temperature (K) points as Tx1 matrix.
  • responsivity: Responsivity (A/W) at different frequencies and temperature points as a FxT matrix.

Note:

  • This optional data is required to model the temperature dependency of the responsivity.
  • Data must be provided for at least two frequency and two temperature points.
  • Responsivity must be a positive number.
elec_eq_ckt_data (optional) struct with fields described in elec_eq_ckt_data  Data required for modeling the electrical equivalent circuit for accurate electro-optic simulations. For more information on the electrical equivalent circuit, see Electrical equivalent circuit details in the photonic model page.

elec_eq_ckt_data  

Field Type Description
Rj number Series resistance (Ω) of the modulator.
Cj_data number/matrix

Junction capacitance (F) of the modulator, provided in either one of the following forms:

1. A single value containing the the junction capacitance.

2. An struct containing junction capacitance as a function of bias voltage, and the required fields are:

  • voltage: Bias voltage (V) given by \(V_{bias} = V_{anode} - V_{cathode}\)
  • cap: Junction capacitance (F)
Rp number Parasitic contact resistance (Ω) of the modulator.
Cp number Parasitic capacitance (F) from the metal pads.

Associated files

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