x = getnamed('source','x max') - 0.4e-6;
z = linspace(getnamed('silicon','z min'),getnamed('source','z min'),401);

dop = getresult("CHARGE","grid");
vtx = [dop.x, dop.z];
N = log10(abs(dop.N));

N_src = interptri(dop.elements,vtx,N,x,z,0);
plot(z*1e6,10^N_src,'depth (um)','doping (1/cm3)','source profile', 'logplot');

x = getnamed('gate','x');
z = linspace(getnamed('silicon','z min'),getnamed('silicon','z max'),401);
N_gate = interptri(dop.elements,vtx,N,x,z,0);

plot(z*1e6,10^N_gate,'depth (um)','doping (1/cm3)','gate profile', 'logplot');